IRF3708PBF
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Infineon Technologies IRF3708PBF

Manufacturer No:
IRF3708PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3708PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 62A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
Rds On (Max) @ Id, Vgs:12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2417 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):87W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF3708PBF IRF3808PBF   IRF3709PBF   IRF3708SPBF   IRF3703PBF   IRF3704PBF   IRF3706PBF   IRF3707PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 75 V 30 V 30 V 30 V 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 140A (Tc) 90A (Tc) 62A (Tc) 210A (Tc) 77A (Tc) 77A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V 10V 4.5V, 10V 2.8V, 10V 7V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 7mOhm @ 82A, 10V 9mOhm @ 15A, 10V 12mOhm @ 15A, 10V 2.8mOhm @ 76A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA 4V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V 220 nC @ 10 V 41 nC @ 5 V 24 nC @ 4.5 V 209 nC @ 10 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±20V ±12V ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2417 pF @ 15 V 5310 pF @ 25 V 2672 pF @ 16 V 2417 pF @ 15 V 8250 pF @ 25 V 1996 pF @ 10 V 2410 pF @ 10 V 1990 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 87W (Tc) 330W (Tc) 3.1W (Ta), 120W (Tc) 87W (Tc) 3.8W (Ta), 230W (Tc) 87W (Tc) 88W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB D2PAK TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-220-3 TO-220-3

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