IRF3707S
  • Share:

Infineon Technologies IRF3707S

Manufacturer No:
IRF3707S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3707S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 62A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):87W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
190

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF3707S IRF3708S   IRF3709S   IRF3707ZS   IRF3707Z   IRF3706S   IRF3707   IRF3707L  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 62A (Tc) 90A (Tc) 59A (Tc) 59A (Tc) 77A (Tc) 62A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V 9mOhm @ 15A, 10V 9.5mOhm @ 21A, 10V 9.5mOhm @ 21A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 3V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 24 nC @ 4.5 V 41 nC @ 5 V 15 nC @ 4.5 V 15 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 19 nC @ 4.5 V
Vgs (Max) ±20V ±12V ±20V ±20V ±20V ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 15 V 2417 pF @ 15 V 2672 pF @ 16 V 1210 pF @ 15 V 1210 pF @ 15 V 2410 pF @ 10 V 1990 pF @ 15 V 1990 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 87W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc) 57W (Tc) 57W (Tc) 88W (Tc) 87W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK D2PAK D2PAK TO-220AB D2PAK TO-220AB TO-262
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

G3R160MT17D
G3R160MT17D
GeneSiC Semiconductor
SIC MOSFET N-CH 21A TO247-3
NDB4060L
NDB4060L
Fairchild Semiconductor
MOSFET N-CH 60V 15A D2PAK
2SK1449
2SK1449
Sanyo
N-CHANNEL SILICON MOSFET
FDD6688
FDD6688
Fairchild Semiconductor
MOSFET N-CH 30V 84A DPAK
DMT10H015LSS-13
DMT10H015LSS-13
Diodes Incorporated
MOSFET N-CH 100V 8.3A 8SO
NVMFS5C460NLWFAFT1G
NVMFS5C460NLWFAFT1G
onsemi
MOSFET N-CH 40V 21A/78A 5DFN
BUK7D25-40EX
BUK7D25-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 8A DFN2020MD-6
HAT2171H-EL-E
HAT2171H-EL-E
Renesas Electronics America Inc
MOSFET N-CH 40V 40A LFPAK
NTD4863NAT4G
NTD4863NAT4G
onsemi
MOSFET N-CH 25V 9.2A/49A DPAK
NTD4804NAT4G
NTD4804NAT4G
onsemi
MOSFET N-CH 30V 14.5A/124A DPAK
APT40SM120S
APT40SM120S
Microsemi Corporation
SICFET N-CH 1200V 41A D3PAK
IPD60R380P6BTMA1
IPD60R380P6BTMA1
Infineon Technologies
MOSFET N-CH 600V 10.6A TO252-3

Related Product By Brand

IRDC3883
IRDC3883
Infineon Technologies
EVAL IR3883
IRFH8311TRPBF
IRFH8311TRPBF
Infineon Technologies
MOSFET N CH 30V 32A PQFN5X6
IRFR540ZPBF
IRFR540ZPBF
Infineon Technologies
MOSFET N-CH 100V 35A DPAK
IRG7PH46UDPBF
IRG7PH46UDPBF
Infineon Technologies
IGBT 1200V 40A 390W TO247AC
XC2286M72F66LAAHXUMA1
XC2286M72F66LAAHXUMA1
Infineon Technologies
IC MCU 16BIT 144LQFP
ITS4200SMENHUMA1
ITS4200SMENHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
TLE4296GV30HTSA1
TLE4296GV30HTSA1
Infineon Technologies
IC REG LINEAR 3V 30MA SCT595-5
CYPD2134-24LQXI
CYPD2134-24LQXI
Infineon Technologies
IC MCU 32BIT 32KB FLASH 24QFN
MB91F526DJCPMC-GS-F4E1
MB91F526DJCPMC-GS-F4E1
Infineon Technologies
IC MCU 32B 1.0625MB FLASH 80LQFP
CY9AF114NPMC-G-MNE1
CY9AF114NPMC-G-MNE1
Infineon Technologies
IC MCU 32BIT FLASH LQFP
CY7C141-25JC
CY7C141-25JC
Infineon Technologies
IC SRAM 8KBIT PARALLEL 52PLCC
S29GL032N90FFI030
S29GL032N90FFI030
Infineon Technologies
IC FLASH 32MBIT PARALLEL 64FBGA