IRF3707S
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Infineon Technologies IRF3707S

Manufacturer No:
IRF3707S
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3707S Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 62A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):87W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number IRF3707S IRF3708S   IRF3709S   IRF3707ZS   IRF3707Z   IRF3706S   IRF3707   IRF3707L  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 20 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 62A (Tc) 90A (Tc) 59A (Tc) 59A (Tc) 77A (Tc) 62A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 15A, 10V 12mOhm @ 15A, 10V 9mOhm @ 15A, 10V 9.5mOhm @ 21A, 10V 9.5mOhm @ 21A, 10V 8.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 3V @ 250µA 2.25V @ 250µA 2.25V @ 250µA 2V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 24 nC @ 4.5 V 41 nC @ 5 V 15 nC @ 4.5 V 15 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V 19 nC @ 4.5 V
Vgs (Max) ±20V ±12V ±20V ±20V ±20V ±12V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 15 V 2417 pF @ 15 V 2672 pF @ 16 V 1210 pF @ 15 V 1210 pF @ 15 V 2410 pF @ 10 V 1990 pF @ 15 V 1990 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 87W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc) 57W (Tc) 57W (Tc) 88W (Tc) 87W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package D2PAK D2PAK D2PAK D2PAK TO-220AB D2PAK TO-220AB TO-262
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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