IRF3707LPBF
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Infineon Technologies IRF3707LPBF

Manufacturer No:
IRF3707LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3707LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 62A TO262
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:62A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:12.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):87W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Part Number IRF3707LPBF IRF3707ZPBF   IRF3709LPBF   IRF3707PBF   IRF3707SPBF   IRF3707ZLPBF   IRF3704LPBF   IRF3706LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc) 59A (Tc) 90A (Tc) 62A (Tc) 62A (Tc) 59A (Tc) 77A (Tc) 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 15A, 10V 9.5mOhm @ 21A, 10V 9mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 9.5mOhm @ 21A, 10V 9mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.25V @ 25µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.25V @ 25µA 3V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 15 nC @ 4.5 V 41 nC @ 5 V 19 nC @ 4.5 V 19 nC @ 4.5 V 15 nC @ 4.5 V 19 nC @ 4.5 V 35 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1990 pF @ 15 V 1210 pF @ 15 V 2672 pF @ 16 V 1990 pF @ 15 V 1990 pF @ 15 V 1210 pF @ 15 V 1996 pF @ 10 V 2410 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 87W (Tc) 57W (Tc) 3.1W (Ta), 120W (Tc) 87W (Tc) 87W (Tc) 57W (Tc) 87W (Tc) 88W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-220AB TO-262 TO-220AB D2PAK TO-262 TO-262 TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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