IRF3704ZPBF
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Infineon Technologies IRF3704ZPBF

Manufacturer No:
IRF3704ZPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3704ZPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 67A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:67A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1220 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Part Number IRF3704ZPBF IRF3704ZSPBF   IRF3709ZPBF   IRF3707ZPBF   IRF3704LPBF   IRF3704PBF   IRF3704SPBF   IRF3704ZLPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V 30 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 67A (Tc) 67A (Tc) 87A (Tc) 59A (Tc) 77A (Tc) 77A (Tc) 77A (Tc) 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 21A, 10V 7.9mOhm @ 21A, 10V 6.3mOhm @ 21A, 10V 9.5mOhm @ 21A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 7.9mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 2.55V @ 250µA 2.55V @ 250µA 2.25V @ 250µA 2.25V @ 25µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V 13 nC @ 4.5 V 26 nC @ 4.5 V 15 nC @ 4.5 V 19 nC @ 4.5 V 19 nC @ 4.5 V 19 nC @ 4.5 V 13 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 10 V 1220 pF @ 10 V 2130 pF @ 15 V 1210 pF @ 15 V 1996 pF @ 10 V 1996 pF @ 10 V 1996 pF @ 10 V 1220 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 57W (Tc) 57W (Tc) 79W (Tc) 57W (Tc) 87W (Tc) 87W (Tc) 87W (Tc) 57W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB TO-220AB TO-262 TO-220AB D2PAK TO-262
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I²Pak, TO-262AA

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