IRF3704LPBF
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Infineon Technologies IRF3704LPBF

Manufacturer No:
IRF3704LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3704LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 77A TO262
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:77A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1996 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):87W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Part Number IRF3704LPBF IRF3704ZLPBF   IRF3704ZPBF   IRF3704PBF   IRF3709LPBF   IRF3707LPBF   IRF3706LPBF   IRF3704SPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 30 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 77A (Tc) 67A (Tc) 67A (Tc) 77A (Tc) 90A (Tc) 62A (Tc) 77A (Tc) 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.8V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 15A, 10V 7.9mOhm @ 21A, 10V 7.9mOhm @ 21A, 10V 9mOhm @ 15A, 10V 9mOhm @ 15A, 10V 12.5mOhm @ 15A, 10V 8.5mOhm @ 15A, 10V 9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.55V @ 250µA 2.55V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 4.5 V 13 nC @ 4.5 V 13 nC @ 4.5 V 19 nC @ 4.5 V 41 nC @ 5 V 19 nC @ 4.5 V 35 nC @ 4.5 V 19 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1996 pF @ 10 V 1220 pF @ 10 V 1220 pF @ 10 V 1996 pF @ 10 V 2672 pF @ 16 V 1990 pF @ 15 V 2410 pF @ 10 V 1996 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 87W (Tc) 57W (Tc) 57W (Tc) 87W (Tc) 3.1W (Ta), 120W (Tc) 87W (Tc) 88W (Tc) 87W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Surface Mount
Supplier Device Package TO-262 TO-262 TO-220AB TO-220AB TO-262 TO-262 TO-262 D2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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