IRF3610SPBF
  • Share:

Infineon Technologies IRF3610SPBF

Manufacturer No:
IRF3610SPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF3610SPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 103A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.6mOhm @ 62A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5380 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
548

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF3610SPBF IRF3710SPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 103A (Tc) 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11.6mOhm @ 62A, 10V 23mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5380 pF @ 25 V 3130 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 333W (Tc) 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TO263-3 D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PJQ4401P-AU_R2_000A1
PJQ4401P-AU_R2_000A1
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
NTMFS4936NCT1G
NTMFS4936NCT1G
Fairchild Semiconductor
11.6A, 30V, 0.0048OHM, N-CHANNE
ZXMN4A06GTA
ZXMN4A06GTA
Diodes Incorporated
MOSFET N-CH 40V 5A SOT223
DN3135K1-G
DN3135K1-G
Microchip Technology
MOSFET N-CH 350V 72MA SOT23-3
SQS462EN-T1_GE3
SQS462EN-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 8A PPAK1212-8
IXTP140N12T2
IXTP140N12T2
IXYS
MOSFET N-CH 120V 140A TO220AB
TK31N60W,S1VF
TK31N60W,S1VF
Toshiba Semiconductor and Storage
MOSFET N CH 600V 30.8A TO247
AOI423
AOI423
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 15A/70A TO251A
DMT4003SCT
DMT4003SCT
Diodes Incorporated
MOSFET N-CH 40V 205A TO220AB
IRFZ48S
IRFZ48S
Vishay Siliconix
MOSFET N-CH 60V 50A D2PAK
STK30N2LLH5
STK30N2LLH5
STMicroelectronics
MOSFET N-CH 25V 30A POLARPAK
2SK4177-E
2SK4177-E
onsemi
MOSFET N-CH 1500V 2A SMP-FD

Related Product By Brand

BF5020WE6327HTSA1
BF5020WE6327HTSA1
Infineon Technologies
MOSFET N-CH 8V 25MA SOT-343
IPT60R080G7XTMA1
IPT60R080G7XTMA1
Infineon Technologies
MOSFET N-CH 650V 29A 8HSOF
IPLK80R600P7ATMA1
IPLK80R600P7ATMA1
Infineon Technologies
MOSFET 800V TDSON-8
AUIRFR48ZTRL
AUIRFR48ZTRL
Infineon Technologies
MOSFET N-CH 55V 42A DPAK
IPL65R650C6SE8211ATMA1
IPL65R650C6SE8211ATMA1
Infineon Technologies
IPL65R650 - 650V AND 700V COOLMO
IRF7424GTRPBF
IRF7424GTRPBF
Infineon Technologies
MOSFET P-CH 30V 11A 8SO
SAF-C161JI-LF CA
SAF-C161JI-LF CA
Infineon Technologies
IC MCU 16BIT ROMLESS 128TQFP
IR2233JTR
IR2233JTR
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 44PLCC
ILD4071XUMA1
ILD4071XUMA1
Infineon Technologies
IC LED DRVR RGLTR PWM 700MA 8DSO
IPS021S
IPS021S
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 D2PAK
MB9BF521KPMC-G-JNE2
MB9BF521KPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 48LQFP
CY7C12701KV18-400BZXC
CY7C12701KV18-400BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA