IRF300P226
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Infineon Technologies IRF300P226

Manufacturer No:
IRF300P226
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF300P226 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 100A TO247AC
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:191 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10030 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):556W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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Similar Products

Part Number IRF300P226 IRF300P227  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 45A, 10V 40mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 191 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10030 pF @ 50 V 4893 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 556W (Tc) 313W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AC PG-TO247-3
Package / Case TO-247-3 TO-247-3

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