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| Part Number | IRF1902PBF | IRF1902GPBF |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) | 4.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V | - |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 4.5V | 85mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V | 7.5 nC @ 4.5 V |
| Vgs (Max) | ±12V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 15 V | 310 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 2.5W (Ta) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SO | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
