IRF1404PBF
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Infineon Technologies IRF1404PBF

Manufacturer No:
IRF1404PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF1404PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 202A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:202A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 121A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:196 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5669 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF1404PBF IRF1405PBF   IRF1407PBF   IRF1404ZPBF   IRF1404SPBF   IRF1104PBF   IRF1404LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs Active Discontinued at Digi-Key Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 55 V 75 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 202A (Tc) 169A (Tc) 130A (Tc) 180A (Tc) 162A (Tc) 100A (Tc) 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 121A, 10V 5.3mOhm @ 101A, 10V 7.8mOhm @ 78A, 10V 3.7mOhm @ 75A, 10V 4mOhm @ 95A, 10V 9mOhm @ 60A, 10V 4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V 260 nC @ 10 V 250 nC @ 10 V 150 nC @ 10 V 200 nC @ 10 V 93 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5669 pF @ 25 V 5480 pF @ 25 V 5600 pF @ 25 V 4340 pF @ 25 V 7360 pF @ 25 V 2900 pF @ 25 V 7360 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 333W (Tc) 330W (Tc) 330W (Tc) 200W (Tc) 3.8W (Ta), 200W (Tc) 170W (Tc) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB D2PAK TO-220AB TO-262
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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