IRF135B203
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Infineon Technologies IRF135B203

Manufacturer No:
IRF135B203
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF135B203 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 135V 129A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):135 V
Current - Continuous Drain (Id) @ 25°C:129A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 77A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9700 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):441W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IRF135B203 IRF135S203  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 135 V 135 V
Current - Continuous Drain (Id) @ 25°C 129A (Tc) 129A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 77A, 10V 8.4mOhm @ 77A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 270 nC @ 10 V 270 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9700 pF @ 50 V 9700 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 441W (Tc) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package PG-TO220-3 PG-TO263-3-2
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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