IRF1310NPBF
  • Share:

Infineon Technologies IRF1310NPBF

Manufacturer No:
IRF1310NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF1310NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 42A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:36mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.09
46

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF1310NPBF IRF1310NSPBF   IRF1010NPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 42A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 22A, 10V 36mOhm @ 22A, 10V 11mOhm @ 43A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V 1900 pF @ 25 V 3210 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 160W (Tc) 3.8W (Ta), 160W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-220AB D2PAK TO-220AB
Package / Case TO-220-3 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

Related Product By Categories

FDMS2504SDC
FDMS2504SDC
Fairchild Semiconductor
MOSFET N-CH 25V 42A/49A DLCOOL56
FDMA8051L
FDMA8051L
onsemi
MOSFET N-CH 40V 10A 6MICROFET
BSC027N10NS5ATMA1
BSC027N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 23A/100A TSON
STB12NM50T4
STB12NM50T4
STMicroelectronics
MOSFET N-CH 550V 12A D2PAK
PJL9480_R2_00001
PJL9480_R2_00001
Panjit International Inc.
150V N-CHANNEL ENHANCEMENT MODE
IPI180N10N3GXKSA1
IPI180N10N3GXKSA1
Infineon Technologies
MOSFET N-CH 100V 43A TO262-3
APT10035JFLL
APT10035JFLL
Microchip Technology
MOSFET N-CH 1000V 25A ISOTOP
IRL640
IRL640
Vishay Siliconix
MOSFET N-CH 200V 17A TO220AB
BSR316PL6327HTSA1
BSR316PL6327HTSA1
Infineon Technologies
MOSFET P-CH 100V 360MA SC59
BS170RL1G
BS170RL1G
onsemi
MOSFET N-CH 60V 500MA TO92-3
TK13A65U(STA4,Q,M)
TK13A65U(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 13A TO220SIS
5LN01SS-TL-H
5LN01SS-TL-H
onsemi
MOSFET N-CH 50V 100MA 3SSFP

Related Product By Brand

PTFA211801E V4
PTFA211801E V4
Infineon Technologies
FET RF 65V 2.14GHZ H-36260-2
IPI90R1K2C3XKSA1
IPI90R1K2C3XKSA1
Infineon Technologies
MOSFET N-CH 900V 5.1A TO262-3
IRG7PK35UD1PBF
IRG7PK35UD1PBF
Infineon Technologies
IGBT 1400V 40A 167W TO247AC
TCA3727GXUMA1
TCA3727GXUMA1
Infineon Technologies
IC MTR DRV BIPOLR 4.5-6.5V 24DSO
TLE42762DVATMA1
TLE42762DVATMA1
Infineon Technologies
IC REG LIN POS ADJ 400MA TO252-5
MB90025FPMT-GS-290E1
MB90025FPMT-GS-290E1
Infineon Technologies
IC MCU 120LQFP
MB90347APFV-G-116E1
MB90347APFV-G-116E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90549GSPFR-G-318E1
MB90549GSPFR-G-318E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
MB91243PFV-GS-122E1
MB91243PFV-GS-122E1
Infineon Technologies
IC MCU 144LQFP
CY14B104K-ZS45XI
CY14B104K-ZS45XI
Infineon Technologies
IC NVSRAM 4MBIT PAR 44TSOP II
CY7C1262XV18-366BZXC
CY7C1262XV18-366BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY39C031WQN-G-212-JNEFE1
CY39C031WQN-G-212-JNEFE1
Infineon Technologies
IC REG TRPL BUCK/LNR SYNC 28QFN