IRF1104LPBF
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Infineon Technologies IRF1104LPBF

Manufacturer No:
IRF1104LPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF1104LPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A TO-262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF1104LPBF IRF1104PBF   IRF1404LPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 162A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 60A, 10V 9mOhm @ 60A, 10V 4mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 93 nC @ 10 V 200 nC @ 10 V
Vgs (Max) - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V 2900 pF @ 25 V 7360 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 170W (Tc) 3.8W (Ta), 200W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-262 TO-220AB TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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