IRF1018ESLPBF
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Infineon Technologies IRF1018ESLPBF

Manufacturer No:
IRF1018ESLPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF1018ESLPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 79A TO262
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IRF1018ESLPBF IRF1018ESPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 79A (Tc) 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 47A, 10V 8.4mOhm @ 47A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 69 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2290 pF @ 50 V 2290 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-262 D2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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