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| Part Number | IRF1010NSTRLPBF | IRF1310NSTRLPBF | IRF1010ZSTRLPBF | IRF1010NSTRRPBF | IRF1010ESTRLPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Last Time Buy | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 100 V | 55 V | 55 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) | 42A (Tc) | 75A (Tc) | 85A (Tc) | 84A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 43A, 10V | 36mOhm @ 22A, 10V | 7.5mOhm @ 75A, 10V | 11mOhm @ 43A, 10V | 12mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 110 nC @ 10 V | 95 nC @ 10 V | 120 nC @ 10 V | 130 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V | 1900 pF @ 25 V | 2840 pF @ 25 V | 3210 pF @ 25 V | 3210 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 180W (Tc) | 3.8W (Ta), 160W (Tc) | 140W (Tc) | 180W (Tc) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
