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| Part Number | IRF1010EPBF | IRF1018EPBF | IRF1010NPBF | IRF1010ZPBF | IRF1010EZPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active | Active | Not For New Designs | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V | 60 V | 55 V | 55 V | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) | 79A (Tc) | 85A (Tc) | 75A (Tc) | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V | 8.4mOhm @ 47A, 10V | 11mOhm @ 43A, 10V | 7.5mOhm @ 75A, 10V | 8.5mOhm @ 51A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 100µA | 4V @ 250µA | 4V @ 250µA | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 69 nC @ 10 V | 120 nC @ 10 V | 95 nC @ 10 V | 86 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V | 2290 pF @ 50 V | 3210 pF @ 25 V | 2840 pF @ 25 V | 2810 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 200W (Tc) | 110W (Tc) | 180W (Tc) | 140W (Tc) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
