IRF100S201
  • Share:

Infineon Technologies IRF100S201

Manufacturer No:
IRF100S201
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF100S201 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 192A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:192A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):441W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.17
258

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF100S201 IRF100B201  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 192A (Tc) 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 115A, 10V 4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9500 pF @ 50 V 9500 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 441W (Tc) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package PG-TO263-3 TO-220AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-3

Related Product By Categories

PJE8403_R1_00001
PJE8403_R1_00001
Panjit International Inc.
SOT-523, MOSFET
NTP095N65S3HF
NTP095N65S3HF
onsemi
MOSFET N-CH 650V 36A TO220-3
DMP3037LSS-13
DMP3037LSS-13
Diodes Incorporated
MOSFET P-CH 30V 5.8A 8SO
IPP055N08NF2SAKMA1
IPP055N08NF2SAKMA1
Infineon Technologies
TRENCH 40<-<100V
SI2333DDS-T1-GE3
SI2333DDS-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 6A SOT23-3
SISA04DN-T1-GE3
SISA04DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK1212-8
TPN2010FNH,L1Q
TPN2010FNH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 250V 5.6A 8TSON
STB14NK60ZT4
STB14NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 13.5A D2PAK
IPLK70R1K2P7ATMA1
IPLK70R1K2P7ATMA1
Infineon Technologies
MOSFET N-CH 700V TDSON-8
NTD18N06
NTD18N06
onsemi
MOSFET N-CH 60V 18A DPAK
SUD08P06-155L-E3
SUD08P06-155L-E3
Vishay Siliconix
MOSFET P-CH 60V 8.4A TO252
RTF020P02TL
RTF020P02TL
Rohm Semiconductor
MOSFET P-CH 20V 2A TUMT3

Related Product By Brand

BAT1707E6327HTSA1
BAT1707E6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 4V 150MW SOT143-4
BCR 148T E6327
BCR 148T E6327
Infineon Technologies
TRANS PREBIAS NPN 250MW SC75
BSO207PNTMA1
BSO207PNTMA1
Infineon Technologies
MOSFET 2P-CH 20V 5.7A 8SOIC
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
IPA80R900P7XKSA1
IPA80R900P7XKSA1
Infineon Technologies
MOSFET N-CH 800V 6A TO220
IRFR3710ZTR
IRFR3710ZTR
Infineon Technologies
MOSFET N-CH 100V 42A DPAK
IR3567AMGB03TRP
IR3567AMGB03TRP
Infineon Technologies
IC REG BUCK 56VQFN
TLE72782EV50XUMA1
TLE72782EV50XUMA1
Infineon Technologies
IC REG LIN 5V 180MA SSOP-14-EP
IRU1260CMTR
IRU1260CMTR
Infineon Technologies
IC REG CONV PENTIUM 2OUT TO263-7
CY9BF106NAPMC-G-UNE2
CY9BF106NAPMC-G-UNE2
Infineon Technologies
IC MCU 32BIT 512KB FLASH 100LQFP
S25FL512SAGMFMG10
S25FL512SAGMFMG10
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
STK14C88-C45I
STK14C88-C45I
Infineon Technologies
IC NVSRAM 256KBIT PAR 32CDIP