IRF100P218XKMA1
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Infineon Technologies IRF100P218XKMA1

Manufacturer No:
IRF100P218XKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF100P218XKMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 209A TO247AC
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:209A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.28mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs:555 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:25000 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):556W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AC
Package / Case:TO-247-3
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Similar Products

Part Number IRF100P218XKMA1 IRF100P219XKMA1   IRF100P218AKMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 209A (Tc) 203A (Tc) 209A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.28mOhm @ 100A, 10V 1.7mOhm @ 100A, 10V 1.28mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 278µA 3.8V @ 278µA 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs 555 nC @ 10 V 270 nC @ 10 V 412 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 25000 pF @ 50 V 12020 pF @ 50 V 24000 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 556W (Tc) 341W (Tc) 3.8W (Ta), 556W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247AC TO-247AC PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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