IRF100B202
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Infineon Technologies IRF100B202

Manufacturer No:
IRF100B202
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF100B202 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 97A TO220AB
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:97A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.6mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4476 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):221W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRF100B202 IRF100B201  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 97A (Tc) 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 58A, 10V 4.2mOhm @ 115A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4476 pF @ 50 V 9500 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 221W (Tc) 441W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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