IR2112-1
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Infineon Technologies IR2112-1

Manufacturer No:
IR2112-1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IR2112-1 Datasheet
ECAD Model:
-
Description:
IC GATE DRVR HI/LOW SIDE 14DIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:High-Side or Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:6V, 9.5V
Current - Peak Output (Source, Sink):250mA, 500mA
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):80ns, 40ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:14-DIP (0.300", 7.62mm), 13 Leads
Supplier Device Package:14-PDIP
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In Stock

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Similar Products

Part Number IR2112-1 IR2112-2   IR2113-1   IR2110-1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
Driven Configuration High-Side or Low-Side High-Side or Low-Side Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent
Number of Drivers 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 3.3V ~ 20V 3.3V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V 6V, 9.5V 6V, 9.5V 6V, 9.5V
Current - Peak Output (Source, Sink) 250mA, 500mA 250mA, 500mA 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 500 V
Rise / Fall Time (Typ) 80ns, 40ns 80ns, 40ns 25ns, 17ns 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case 14-DIP (0.300", 7.62mm), 13 Leads 16-DIP (0.300", 7.62mm), 14 Leads 14-DIP (0.300", 7.62mm), 13 Leads 14-DIP (0.300", 7.62mm), 13 Leads
Supplier Device Package 14-PDIP 16-PDIP 14-PDIP 14-PDIP

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