IR2110-1PBF
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Infineon Technologies IR2110-1PBF

Manufacturer No:
IR2110-1PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IR2110-1PBF Datasheet
ECAD Model:
-
Description:
IC GATE DRVR HALF-BRIDGE 14DIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:3.3V ~ 20V
Logic Voltage - VIL, VIH:6V, 9.5V
Current - Peak Output (Source, Sink):2A, 2A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):500 V
Rise / Fall Time (Typ):25ns, 17ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:14-DIP (0.300", 7.62mm), 13 Leads
Supplier Device Package:14-PDIP
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Similar Products

Part Number IR2110-1PBF IR2112-1PBF   IR2110-2PBF   IR2113-1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete
Driven Configuration Half-Bridge High-Side or Low-Side Half-Bridge Half-Bridge
Channel Type Independent Independent Independent Independent
Number of Drivers 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 3.3V ~ 20V 10V ~ 20V 3.3V ~ 20V 3.3V ~ 20V
Logic Voltage - VIL, VIH 6V, 9.5V 6V, 9.5V 6V, 9.5V 6V, 9.5V
Current - Peak Output (Source, Sink) 2A, 2A 250mA, 500mA 2A, 2A 2A, 2A
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 500 V 600 V 500 V 600 V
Rise / Fall Time (Typ) 25ns, 17ns 80ns, 40ns 25ns, 17ns 25ns, 17ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case 14-DIP (0.300", 7.62mm), 13 Leads 14-DIP (0.300", 7.62mm), 13 Leads 16-DIP (0.300", 7.62mm), 14 Leads 14-DIP (0.300", 7.62mm), 13 Leads
Supplier Device Package 14-PDIP 14-PDIP 16-PDIP 14-PDIP

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