IR2011PBF
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Infineon Technologies IR2011PBF

Manufacturer No:
IR2011PBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IR2011PBF Datasheet
ECAD Model:
-
Description:
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:High-Side or Low-Side
Channel Type:Independent
Number of Drivers:2
Gate Type:N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.7V, 2.2V
Current - Peak Output (Source, Sink):1A, 1A
Input Type:Inverting
High Side Voltage - Max (Bootstrap):200 V
Rise / Fall Time (Typ):35ns, 20ns
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:8-DIP (0.300", 7.62mm)
Supplier Device Package:8-PDIP
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Similar Products

Part Number IR2011PBF IR2111PBF   IR2011SPBF   IR2010PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Active Active
Driven Configuration High-Side or Low-Side Half-Bridge High-Side or Low-Side Half-Bridge
Channel Type Independent Synchronous Independent Independent
Number of Drivers 2 2 2 2
Gate Type N-Channel MOSFET IGBT, N-Channel MOSFET N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.7V, 2.2V 8.3V, 12.6V 0.7V, 2.2V 6V, 9.5V
Current - Peak Output (Source, Sink) 1A, 1A 250mA, 500mA 1A, 1A 3A, 3A
Input Type Inverting Non-Inverting Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 200 V 600 V 200 V 200 V
Rise / Fall Time (Typ) 35ns, 20ns 80ns, 40ns 35ns, 20ns 10ns, 15ns
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Surface Mount Through Hole
Package / Case 8-DIP (0.300", 7.62mm) 8-DIP (0.300", 7.62mm) 8-SOIC (0.154", 3.90mm Width) 14-DIP (0.300", 7.62mm)
Supplier Device Package 8-PDIP 8-PDIP 8-SOIC 14-DIP

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