Infineon Technologies-IQE013N04LM6CGATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs:	8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3900 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	2.5W (Ta), 107W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount, Wettable Flank
Supplier Device Package:	PG-TTFN-9-1
Package / Case:	8-PowerTDFN

Infineon Technologies IQE013N04LM6CGATMA1