Infineon Technologies-IQE006NE2LM5CGATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	82.1 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	5453 pF @ 12 V
FET Feature:	-
Power Dissipation (Max):	2.1W (Ta), 89W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	IPAK (TO-251AA)
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA

Infineon Technologies IQE006NE2LM5CGATMA1