IPZA60R037P7XKSA1
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Infineon Technologies IPZA60R037P7XKSA1

Manufacturer No:
IPZA60R037P7XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPZA60R037P7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 76A TO247-4
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:37mOhm @ 29.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1.48mA
Gate Charge (Qg) (Max) @ Vgs:121 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5243 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):255W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-4
Package / Case:TO-247-4
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$14.64
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Similar Products

Part Number IPZA60R037P7XKSA1 IPZ60R037P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 29.5A, 10V 37mOhm @ 29.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1.48mA 4V @ 1.48mA
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V 121 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5243 pF @ 400 V 5243 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 255W (Tc) 255W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-4 PG-TO247-4
Package / Case TO-247-4 TO-247-4

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