IPZ40N04S58R4ATMA1
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Infineon Technologies IPZ40N04S58R4ATMA1

Manufacturer No:
IPZ40N04S58R4ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPZ40N04S58R4ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 40A 8TSDSON-32
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:771 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8-32
Package / Case:8-PowerTDFN
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$0.80
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Similar Products

Part Number IPZ40N04S58R4ATMA1 IPZ40N04S55R4ATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V 7V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 20A, 10V 5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 10µA 3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 10 V 23 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 771 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 34W (Tc) 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-8-32 PG-TSDSON-8
Package / Case 8-PowerTDFN 8-PowerVDFN

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