IPWS65R075CFD7AXKSA1
  • Share:

Infineon Technologies IPWS65R075CFD7AXKSA1

Manufacturer No:
IPWS65R075CFD7AXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPWS65R075CFD7AXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 32A TO247-3-41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3288 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):171W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$12.60
18

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPWS65R075CFD7AXKSA1 IPW65R075CFD7AXKSA1   IPWS65R035CFD7AXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc) 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 16.4A, 10V 75mOhm @ 16.4A, 10V 35mOhm @ 35.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 820µA 4.5V @ 820µA 4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 68 nC @ 10 V 145 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3288 pF @ 400 V 3288 pF @ 400 V 7149 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 171W (Tc) 171W (Tc) 305W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

PMV40UN2R
PMV40UN2R
Nexperia USA Inc.
MOSFET N-CH 30V 3.7A TO236AB
TP5322K1-G
TP5322K1-G
Microchip Technology
MOSFET P-CH 220V 120MA TO236AB
SI7322DN-T1-E3
SI7322DN-T1-E3
Vishay Siliconix
MOSFET N-CH 100V 18A PPAK 1212-8
IRFRC20TRPBF-BE3
IRFRC20TRPBF-BE3
Vishay Siliconix
MOSFET N-CH 600V 2A DPAK
SIRA50ADP-T1-RE3
SIRA50ADP-T1-RE3
Vishay Siliconix
MOSFET N-CH 40V 54.8A/219A PPAK
STB85NF55T4
STB85NF55T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
SIHA17N80E-E3
SIHA17N80E-E3
Vishay Siliconix
MOSFET N-CHANNEL 800V 15A TO220
PMPB10ENZ
PMPB10ENZ
Nexperia USA Inc.
MOSFET N-CH 30V 10A DFN2020MD-6
DMT6013LSS-13
DMT6013LSS-13
Diodes Incorporated
MOSFET N-CH 60V 10A 8SO
FQB13N10TM
FQB13N10TM
onsemi
MOSFET N-CH 100V 12.8A D2PAK
FQH70N10
FQH70N10
onsemi
MOSFET N-CH 100V 70A TO247-3
IRFB7434GPBF
IRFB7434GPBF
Infineon Technologies
MOSFET N CH 40V 195A TO220AB

Related Product By Brand

TLS715B0EJV50BOARDTOBO1
TLS715B0EJV50BOARDTOBO1
Infineon Technologies
TLS715B0EJ V50 BOARD
KITACTBRD60R065S7TOBO1
KITACTBRD60R065S7TOBO1
Infineon Technologies
ACTIVE BRIDGE BOARD 60R065S7
BB844E6327HTSA1
BB844E6327HTSA1
Infineon Technologies
DIODE VARACTOR 18V DUAL SOT23-3
T1081N70TOHXPSA1
T1081N70TOHXPSA1
Infineon Technologies
SCR MODULE 7000V 2040A DO200AE
BC 858A E6327
BC 858A E6327
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
PTFA212001F/1 P4
PTFA212001F/1 P4
Infineon Technologies
IC FET RF LDMOS 200W H-37260-2
IPB80P04P405ATMA1
IPB80P04P405ATMA1
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
IRF7403TR
IRF7403TR
Infineon Technologies
MOSFET N-CH 30V 8.5A 8SO
IR21271
IR21271
Infineon Technologies
IC GATE DRV HI-SIDE/LO-SIDE 8DIP
IR2161PBF
IR2161PBF
Infineon Technologies
IC HALOGEN CNTRL 70KHZ 8DIP
S29CD016J1MFAM112
S29CD016J1MFAM112
Infineon Technologies
IC FLASH 16MBIT PARALLEL 80FBGA
CY7C1263KV18-500BZXC
CY7C1263KV18-500BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA