IPWS65R075CFD7AXKSA1
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Infineon Technologies IPWS65R075CFD7AXKSA1

Manufacturer No:
IPWS65R075CFD7AXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPWS65R075CFD7AXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 32A TO247-3-41
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 820µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3288 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):171W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
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Similar Products

Part Number IPWS65R075CFD7AXKSA1 IPW65R075CFD7AXKSA1   IPWS65R035CFD7AXKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc) 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 16.4A, 10V 75mOhm @ 16.4A, 10V 35mOhm @ 35.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 820µA 4.5V @ 820µA 4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 68 nC @ 10 V 145 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3288 pF @ 400 V 3288 pF @ 400 V 7149 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 171W (Tc) 171W (Tc) 305W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-41 PG-TO247-3-41 PG-TO247-3-41
Package / Case TO-247-3 TO-247-3 TO-247-3

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