IPWS65R050CFD7AXKSA1
  • Share:

Infineon Technologies IPWS65R050CFD7AXKSA1

Manufacturer No:
IPWS65R050CFD7AXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPWS65R050CFD7AXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 45A TO247-3-41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:45A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs:102 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4975 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$14.22
36

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPWS65R050CFD7AXKSA1 IPW65R050CFD7AXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc) 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 24.8A, 10V 50mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.24mA 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V 102 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4975 pF @ 400 V 4975 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 227W (Tc) 227W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-41 PG-TO247-3-41
Package / Case TO-247-3 TO-247-3

Related Product By Categories

UF3C120040K4S
UF3C120040K4S
UnitedSiC
SICFET N-CH 1200V 65A TO247-4
FCH041N60E
FCH041N60E
onsemi
MOSFET N-CH 600V 77A TO247-3
PSMN012-100YS,115
PSMN012-100YS,115
Nexperia USA Inc.
MOSFET N-CH 100V 60A LFPAK56
FDMC86183
FDMC86183
onsemi
MOSFET N-CH 100V 47A 8PQFN
STD3NK60Z-1
STD3NK60Z-1
STMicroelectronics
MOSFET N-CH 600V 2.4A IPAK
RM10N100LD
RM10N100LD
Rectron USA
MOSFET N-CH 100V 10A TO252-2
PJD14P06A-AU_L2_000A1
PJD14P06A-AU_L2_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
PMV100ENEAR
PMV100ENEAR
Nexperia USA Inc.
MOSFET N-CH 30V 3A TO236AB
SIHD6N65ET4-GE3
SIHD6N65ET4-GE3
Vishay Siliconix
MOSFET N-CH 650V 7A TO252AA
PH20100S,115
PH20100S,115
Nexperia USA Inc.
MOSFET N-CH 100V 34.3A LFPAK56
NTP30N06LG
NTP30N06LG
onsemi
MOSFET N-CH 60V 30A TO220AB
FDB8444-F085
FDB8444-F085
onsemi
MOSFET N-CH 40V 70A TO263AB

Related Product By Brand

IPB26CN10N
IPB26CN10N
Infineon Technologies
N-CHANNEL POWER MOSFET
IPI040N06N3GXKSA1
IPI040N06N3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 90A TO262-3
IPI530N15N3GXKSA1
IPI530N15N3GXKSA1
Infineon Technologies
MOSFET N-CH 150V 21A TO262-3
XMC1100T016X0032ABXUMA1
XMC1100T016X0032ABXUMA1
Infineon Technologies
IC MCU 32BIT 32KB FLASH 16TSSOP
BTS7960P
BTS7960P
Infineon Technologies
IC NOVALITHIC 1/2 BRIDGE TO220-7
TLE4247EL40
TLE4247EL40
Infineon Technologies
BUFFER/INVERTER PERIPHL DRIVER
BGA416E6327HTSA1
BGA416E6327HTSA1
Infineon Technologies
BGA416 - RF CASCODE AMPLIFIER
CY2304SXI-1T
CY2304SXI-1T
Infineon Technologies
IC CLK ZDB 4OUT 133MHZ 8SOIC
MB90598GHPFR-G-195
MB90598GHPFR-G-195
Infineon Technologies
IC MCU 16BIT 128KB MROM 100QFP
CY7C1473BV33-133AXC
CY7C1473BV33-133AXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 100TQFP
STK14CA8-RF45ITR
STK14CA8-RF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
CY14B104N-BA25XIT
CY14B104N-BA25XIT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA