IPW90R1K2C3FKSA1
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Infineon Technologies IPW90R1K2C3FKSA1

Manufacturer No:
IPW90R1K2C3FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW90R1K2C3FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 5.1A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Similar Products

Part Number IPW90R1K2C3FKSA1 IPW90R1K0C3FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310µA 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V 850 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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