IPW80R290C3AXKSA1
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Infineon Technologies IPW80R290C3AXKSA1

Manufacturer No:
IPW80R290C3AXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW80R290C3AXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 17A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:290mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2300 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):227W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW80R290C3AXKSA1 IPW80R290C3AFKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 800 V -
Current - Continuous Drain (Id) @ 25°C 17A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 290mOhm @ 11A, 10V -
Vgs(th) (Max) @ Id 3.9V @ 1mA -
Gate Charge (Qg) (Max) @ Vgs 117 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 227W (Tc) -
Operating Temperature -40°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO247-3 -
Package / Case TO-247-3 -

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