IPW65R420CFDFKSA1
  • Share:

Infineon Technologies IPW65R420CFDFKSA1

Manufacturer No:
IPW65R420CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R420CFDFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 8.7A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:870 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$2.49
82

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R420CFDFKSA1 IPW65R420CFDFKSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc) 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V 420mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340µA 4.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 31.5 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V 870 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83.3W (Tc) 83.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-41
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BSZ010NE2LS5ATMA1
BSZ010NE2LS5ATMA1
Infineon Technologies
MOSFET N-CH 25V 32A/40A TSDSON
MTD6N20E1
MTD6N20E1
onsemi
N-CHANNEL POWER MOSFET
FDU8796
FDU8796
Fairchild Semiconductor
MOSFET N-CH 25V 35A IPAK
IXTP12N50P
IXTP12N50P
IXYS
MOSFET N-CH 500V 12A TO220AB
STD100NH02LT4
STD100NH02LT4
STMicroelectronics
MOSFET N-CH 24V 60A DPAK
SIR800ADP-T1-GE3
SIR800ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 50.2A/177A PPAK
IPP040N06N3GXKSA1
IPP040N06N3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 90A TO220-3
IXFK66N85X
IXFK66N85X
IXYS
MOSFET N-CH 850V 66A TO264
RM120N60T2
RM120N60T2
Rectron USA
MOSFET N-CH 60V 120A TO220-3
NVMFS4C03NWFT1G
NVMFS4C03NWFT1G
onsemi
MOSFET N-CH 30V 31.4A/143A 5DFN
IRFIBF30G
IRFIBF30G
Vishay Siliconix
MOSFET N-CH 900V 1.9A TO220-3
NVD5802NT4G-VF01
NVD5802NT4G-VF01
onsemi
MOSFET N-CH 40V 16.4A/101A DPAK

Related Product By Brand

DD98N24KHPSA1
DD98N24KHPSA1
Infineon Technologies
DIODE MODULE GP 2400V 98A
BSP60
BSP60
Infineon Technologies
TRANS PNP DARL 45V 1A SOT223-4
BSC010N04LSATMA1
BSC010N04LSATMA1
Infineon Technologies
MOSFET N-CH 40V 38A/100A TDSON
XMC1402Q040X0128AAXUMA1
XMC1402Q040X0128AAXUMA1
Infineon Technologies
IC MCU 32BIT 128KB FLASH 40VQFN
IR2118STRPBF
IR2118STRPBF
Infineon Technologies
IC GATE DRVR HIGH-SIDE 8SOIC
IR2184
IR2184
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
CY22392ZXC-398T
CY22392ZXC-398T
Infineon Technologies
IC CLOCK GEN PROG
CY8C20247-24LKXI
CY8C20247-24LKXI
Infineon Technologies
IC CAPSENCE 16K FLASH 16QFN
CY7C68000A-56BAXC
CY7C68000A-56BAXC
Infineon Technologies
IC TRANSCEIVER FULL 1/1 56VFBGA
CY14B104NA-ZS25XE
CY14B104NA-ZS25XE
Infineon Technologies
IC NVSRAM 4MBIT PAR 44TSOP II
CY7C1415AV18-167BZC
CY7C1415AV18-167BZC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
CY90F022CPF-GS-9249E1
CY90F022CPF-GS-9249E1
Infineon Technologies
IC MCU MICOM FLASH 100QFP