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| Part Number | IPW65R190E6 | IPW65R190C6 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | - | N-Channel |
| Technology | - | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | - | 650 V |
| Current - Continuous Drain (Id) @ 25°C | - | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V |
| Rds On (Max) @ Id, Vgs | - | 190mOhm @ 7.3A, 10V |
| Vgs(th) (Max) @ Id | - | 3.5V @ 730µA |
| Gate Charge (Qg) (Max) @ Vgs | - | 73 nC @ 10 V |
| Vgs (Max) | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | - | 1620 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | - | 151W (Tc) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Through Hole |
| Supplier Device Package | - | PG-TO247-3-41 |
| Package / Case | - | TO-247-3 |
