IPW65R190C6FKSA1
  • Share:

Infineon Technologies IPW65R190C6FKSA1

Manufacturer No:
IPW65R190C6FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R190C6FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 20.2A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
497

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R190C6FKSA1 IPW65R190E6FKSA1   IPW60R190C6FKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 20.2A (Tc) 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V 190mOhm @ 7.3A, 10V 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA 3.5V @ 730µA 3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 73 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V 1620 pF @ 100 V 1400 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 151W (Tc) 151W (Tc) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

2SK2552B-T1-AT
2SK2552B-T1-AT
Renesas Electronics America Inc
N-CHANNEL SMALL SIGNAL MOSFET
IPD60R600CP
IPD60R600CP
Infineon Technologies
N-CHANNEL POWER MOSFET
IRF7493TRPBF
IRF7493TRPBF
Infineon Technologies
MOSFET N-CH 80V 9.3A 8SO
BUK7Y3R5-40HX
BUK7Y3R5-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
IXTF1R4N450
IXTF1R4N450
IXYS
MOSFET N-CH 4500V 1.4A I4PAC
IRLR120
IRLR120
Vishay Siliconix
MOSFET N-CH 100V 7.7A DPAK
IRFB13N50A
IRFB13N50A
Vishay Siliconix
MOSFET N-CH 500V 14A TO220AB
STW21NM50N
STW21NM50N
STMicroelectronics
MOSFET N-CH 500V 18A TO247-3
FDZ391P
FDZ391P
onsemi
MOSFET P-CH 20V 3A 6WLCSP
BUK7619-100B,118
BUK7619-100B,118
NXP USA Inc.
MOSFET N-CH 100V 64A D2PAK
R6520ENZ4C13
R6520ENZ4C13
Rohm Semiconductor
650V 20A TO-247, LOW-NOISE POWER
RP1E125XNTR
RP1E125XNTR
Rohm Semiconductor
MOSFET N-CH 30V 12.5A MPT6

Related Product By Brand

IDH02G65C5XKSA2
IDH02G65C5XKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 2A TO220-2
IPL65R1K5C6SE8211ATMA1
IPL65R1K5C6SE8211ATMA1
Infineon Technologies
IPL65R1K5 - 650V AND 700V COOLMO
BSZ060NE2LSATMA1
BSZ060NE2LSATMA1
Infineon Technologies
MOSFET N-CH 25V 12A/40A TSDSON
IPA60R400CEXKSA1
IPA60R400CEXKSA1
Infineon Technologies
MOSFET N-CH 600V 10.3A TO220-FP
IPI040N06N3GXKSA1
IPI040N06N3GXKSA1
Infineon Technologies
MOSFET N-CH 60V 90A TO262-3
IRF3707ZLPBF
IRF3707ZLPBF
Infineon Technologies
MOSFET N-CH 30V 59A TO262
SPU04N60S5BKMA1
SPU04N60S5BKMA1
Infineon Technologies
MOSFET N-CH 600V 4.5A TO251-3
SAL-TC299TP-128F300N BC
SAL-TC299TP-128F300N BC
Infineon Technologies
IC MCU 32BIT AURIX 516LFBGA
PBL38630/2SOA
PBL38630/2SOA
Infineon Technologies
IC TELECOM INTERFACE PDSO-24
BTS500801EGAAUMA1
BTS500801EGAAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
TLF50281ELXUMA2
TLF50281ELXUMA2
Infineon Technologies
TLF50281 - SWITCHING REGULATOR,
MB96F395RSBPMC-GSE2
MB96F395RSBPMC-GSE2
Infineon Technologies
IC MCU 16BIT 160KB FLASH 100LQFP