Please send RFQ , we will respond immediately.
| Part Number | IPW65R190C6 | IPW65R190E6 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Active |
| FET Type | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 650 V | - |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V | - |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA | - |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V | - |
| Vgs (Max) | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 151W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Through Hole | - |
| Supplier Device Package | PG-TO247-3-41 | - |
| Package / Case | TO-247-3 | - |
