IPW65R145CFD7AXKSA1
  • Share:

Infineon Technologies IPW65R145CFD7AXKSA1

Manufacturer No:
IPW65R145CFD7AXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R145CFD7AXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 17A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:145mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 420µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1694 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):98W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$7.17
6

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R145CFD7AXKSA1 IPW65R115CFD7AXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 145mOhm @ 8.5A, 10V 115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 420µA 4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1694 pF @ 400 V 1950 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 98W (Tc) 114W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3-41
Package / Case TO-247-3 TO-247-3

Related Product By Categories

2SJ687-ZK-E1-AY
2SJ687-ZK-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 20V 20A TO252
IPD04N03LB G
IPD04N03LB G
Infineon Technologies
MOSFET N-CH 30V 50A TO252-3
DIT150N03
DIT150N03
Diotec Semiconductor
MOSFET N-CH 30V 150A TO220AB
PJD25N06A-AU_L2_000A1
PJD25N06A-AU_L2_000A1
Panjit International Inc.
60V N-CHANNEL ENHANCEMENT MODE M
DMP1012UCB9-7
DMP1012UCB9-7
Diodes Incorporated
MOSFET P-CH 8V 10A U-WLB1515-9
IXTA08N100D2-TRL
IXTA08N100D2-TRL
IXYS
MOSFET N-CH 1000V 800MA TO263
IRF7450TR
IRF7450TR
Infineon Technologies
MOSFET N-CH 200V 2.5A 8SO
IXTY1R6N50P
IXTY1R6N50P
IXYS
MOSFET N-CH 500V 1.6A TO252
IXTR30N25
IXTR30N25
IXYS
MOSFET N-CH 250V 25A ISOPLUS247
SI5913DC-T1-GE3
SI5913DC-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 4A 1206-8
AON6532
AON6532
Alpha & Omega Semiconductor Inc.
MOSFET N CH 30V 27A 8DFN
STB26NM60ND
STB26NM60ND
STMicroelectronics
MOSFET N-CH 600V 21A D2PAK

Related Product By Brand

ESD3V3U1U-02LS E6327
ESD3V3U1U-02LS E6327
Infineon Technologies
TVS DIODE 3.3VWM 28VC TSSLP-2-1
DD175N30KHPSA1
DD175N30KHPSA1
Infineon Technologies
DIODE MODULE GP 3000V 223A
IRAMS10UP60B-3
IRAMS10UP60B-3
Infineon Technologies
IC PWR MOD PLUG-N-DRIVE 600V 10A
IPB80P04P4L06ATMA2
IPB80P04P4L06ATMA2
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
IRLR7833TRRPBF
IRLR7833TRRPBF
Infineon Technologies
MOSFET N-CH 30V 140A DPAK
IRF6678TR1PBF
IRF6678TR1PBF
Infineon Technologies
MOSFET N-CH 30V 30A DIRECTFET
PEB2054-N-V1.0
PEB2054-N-V1.0
Infineon Technologies
TIME SLOT ASSIGNER
BGS12PN10E6327XTSA1
BGS12PN10E6327XTSA1
Infineon Technologies
IC RF SWITCH SPDT 6GHZ TSNP10-1
CY90F351SPMC-GS-SPE1
CY90F351SPMC-GS-SPE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 64LQFP
CY7C1041G30-10BVXIT
CY7C1041G30-10BVXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
S25FL032P0XNFI001M
S25FL032P0XNFI001M
Infineon Technologies
IC FLASH 32MBIT SPI/QUAD 8WSON
IS29GL512S-11TFV01
IS29GL512S-11TFV01
Infineon Technologies
IC FLASH 512MBIT PARALLEL 56TSOP