IPW65R110CFDFKSA1
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Infineon Technologies IPW65R110CFDFKSA1

Manufacturer No:
IPW65R110CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R110CFDFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 31.2A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs:118 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):277.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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Part Number IPW65R110CFDFKSA1 IPW65R150CFDFKSA1   IPW65R190CFDFKSA1   IPW65R110CFDFKSA2   IPW65R310CFDFKSA1   IPW65R110CFDAFKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc) 22.4A (Tc) 17.5A (Tc) 31.2A (Tc) 11.4A (Tc) 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V 150mOhm @ 9.3A, 10V 190mOhm @ 7.3A, 10V 110mOhm @ 12.7A, 10V 310mOhm @ 4.4A, 10V 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA 4.5V @ 900µA 4.5V @ 730µA 4.5V @ 1.3mA 4.5V @ 440µA 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118 nC @ 10 V 86 nC @ 10 V 68 nC @ 10 V 118 nC @ 10 V 41 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 100 V 2340 pF @ 100 V 1850 pF @ 100 V 3240 pF @ 100 V 1100 pF @ 100 V 3240 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 277.8W (Tc) 195.3W (Tc) 151W (Tc) 277.8W (Tc) 104.2W (Tc) 277.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3 PG-TO247-3-1 PG-TO247-3-41 PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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