IPW65R080CFDFKSA2
  • Share:

Infineon Technologies IPW65R080CFDFKSA2

Manufacturer No:
IPW65R080CFDFKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R080CFDFKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 43.3A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.8mA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5030 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):391W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$8.68
41

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R080CFDFKSA2 IPW65R080CFDFKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 700 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.6A, 10V 80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.8mA 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5030 pF @ 100 V 5030 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 391W (Tc) 391W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

Related Product By Categories

IPI50R250CP
IPI50R250CP
Infineon Technologies
N-CHANNEL POWER MOSFET
STP24N60M6
STP24N60M6
STMicroelectronics
MOSFET N-CH 600V TO220
ZVP0545GTA
ZVP0545GTA
Diodes Incorporated
MOSFET P-CH 450V 75MA SOT223
SIHG47N60E-E3
SIHG47N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 47A TO247AC
STH22N95K5-2AG
STH22N95K5-2AG
STMicroelectronics
MOSFET
PJD4NA65_R2_00001
PJD4NA65_R2_00001
Panjit International Inc.
650V N-CHANNEL MOSFET
DMP2240UWQ-7
DMP2240UWQ-7
Diodes Incorporated
MOSFET P-CH 20V 1.5A SOT323
DMT67M8LK3-13
DMT67M8LK3-13
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO252 T&R
IRFR9N20DTRL
IRFR9N20DTRL
Infineon Technologies
MOSFET N-CH 200V 9.4A DPAK
IRF3711LPBF
IRF3711LPBF
Infineon Technologies
MOSFET N-CH 20V 110A TO262
AON7426
AON7426
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 18A/40A 8DFN
RZQ045P01TR
RZQ045P01TR
Rohm Semiconductor
MOSFET P-CH 12V 4.5A TSMT6

Related Product By Brand

BSO303PHXUMA1
BSO303PHXUMA1
Infineon Technologies
MOSFET 2P-CH 30V 7A 8DSO
BSS816NWH6327XTSA1
BSS816NWH6327XTSA1
Infineon Technologies
MOSFET N-CH 20V 1.4A SOT323-3
IPP034N03LG
IPP034N03LG
Infineon Technologies
N-CHANNEL POWER MOSFET
BTS247ZE3062ANTMA1
BTS247ZE3062ANTMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IPN80R900P7ATMA1
IPN80R900P7ATMA1
Infineon Technologies
MOSFET N-CHANNEL 800V 6A SOT223
PEF4268FV1.1-INF
PEF4268FV1.1-INF
Infineon Technologies
DUSLIC: SUBSCRIBER LINE INTERFAC
ICE3BS02G
ICE3BS02G
Infineon Technologies
IC OFFLINE SWITCH FLYBACK 8DSO
SP000410806
SP000410806
Infineon Technologies
KIT SAMPLE RF FOR RF SWITCHING
MB96F647RBPMC-GE1
MB96F647RBPMC-GE1
Infineon Technologies
IC MCU 16BIT 416KB FLASH 100LQFP
MB96F623ABPMC-GS-F4E1
MB96F623ABPMC-GS-F4E1
Infineon Technologies
IC MCU 16BIT 96KB FLASH 64LQFP
S25FL064LABMFB010
S25FL064LABMFB010
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 8SOIC
S70FS01GSAGBHB213
S70FS01GSAGBHB213
Infineon Technologies
IC FLASH 1GBIT SPI/QUAD 24BGA