IPW65R080CFDFKSA1
  • Share:

Infineon Technologies IPW65R080CFDFKSA1

Manufacturer No:
IPW65R080CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R080CFDFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 700V 43.3A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5030 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):391W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$11.99
24

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R080CFDFKSA1 IPW65R080CFDFKSA2   IPW65R080CFDAFKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 43.3A (Tc) 43.3A (Tc) 43.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17.6A, 10V 80mOhm @ 17.6A, 10V 80mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.76mA 4.5V @ 1.8mA 4.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 167 nC @ 10 V 161 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5030 pF @ 100 V 5030 pF @ 100 V 4440 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 391W (Tc) 391W (Tc) 391W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

G20P08K
G20P08K
Goford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
DMN313DLT-7
DMN313DLT-7
Diodes Incorporated
MOSFET N-CH 30V 270MA SOT523
BSR92PH6327XTSA1
BSR92PH6327XTSA1
Infineon Technologies
MOSFET P-CH 250V 140MA SC59
PSMN2R4-30MLDX
PSMN2R4-30MLDX
Nexperia USA Inc.
MOSFET N-CH 30V 70A LFPAK33
NTHL041N60S5H
NTHL041N60S5H
onsemi
NTHL041N60S5H
NVMFS5C430NAFT1G
NVMFS5C430NAFT1G
onsemi
MOSFET N-CH 40V 35A/185A 5DFN
IPLU250N04S41R7XTMA1
IPLU250N04S41R7XTMA1
Infineon Technologies
MOSFET N-CH 40V 250A 8HSOF
IXFX90N60X
IXFX90N60X
IXYS
MOSFET N-CH 600V 90A PLUS247-3
NTP75N03L09
NTP75N03L09
onsemi
MOSFET N-CH 30V 75A TO220AB
STP10NM50N
STP10NM50N
STMicroelectronics
MOSFET N-CH 500V 7A TO220
2SK4043LS
2SK4043LS
onsemi
MOSFET N-CH 30V 20A TO220FI
IPD06P004NSAUMA1
IPD06P004NSAUMA1
Infineon Technologies
MOSFET P-CH 60V 16.4A TO252

Related Product By Brand

REFFRIDGEC101T6EDTOBO1
REFFRIDGEC101T6EDTOBO1
Infineon Technologies
REFERENCE BOARD
BCX56H6327XTSA1
BCX56H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
IPB50R250CP
IPB50R250CP
Infineon Technologies
N-CHANNEL POWER MOSFET
SKW07N120
SKW07N120
Infineon Technologies
IGBT, 16.5A, 1200V, N-CHANNEL
ICE2QR4765ZXKLA1
ICE2QR4765ZXKLA1
Infineon Technologies
IC OFFLINE SWITCH FLYBACK 7DIP
IPS1011SPBF
IPS1011SPBF
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 D2PAK
CY9BF466RBGL-GK7E1
CY9BF466RBGL-GK7E1
Infineon Technologies
IC MCU 32BIT 544KB FLASH 144FBGA
MB89663PF-GT-129-BND
MB89663PF-GT-129-BND
Infineon Technologies
IC MCU 8BIT 8KB MROM 64QFP
CY90F497GPMCR-G-ERE1
CY90F497GPMCR-G-ERE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 64QFP
CY90020PMT-GS-118-BNDE1
CY90020PMT-GS-118-BNDE1
Infineon Technologies
IC MCU 120LQFP
CY91213APMC-GS-235E1
CY91213APMC-GS-235E1
Infineon Technologies
IC MCU
S25FL064LABBHB030
S25FL064LABBHB030
Infineon Technologies
IC FLASH 64MBIT SPI/QUAD 24BGA