IPW65R070C6FKSA1
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Infineon Technologies IPW65R070C6FKSA1

Manufacturer No:
IPW65R070C6FKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R070C6FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 53.5A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:53.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 17.6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.76mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):391W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
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$12.66
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Similar Products

Part Number IPW65R070C6FKSA1 IPW60R070C6FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 53.5A (Tc) 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 17.6A, 10V 70mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.76mA 3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 100 V 3800 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 391W (Tc) 391W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3

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