IPW65R041CFDFKSA1
  • Share:

Infineon Technologies IPW65R041CFDFKSA1

Manufacturer No:
IPW65R041CFDFKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW65R041CFDFKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 68.5A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-1
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$17.33
43

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW65R041CFDFKSA1 IPW65R041CFDFKSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 68.5A (Tc) 68.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 33.1A, 10V 41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 3.3mA 4.5V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8400 pF @ 100 V 8400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3-1 PG-TO247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BUK7608-40B,118
BUK7608-40B,118
Nexperia USA Inc.
NEXPERIA BUK7608 - N-CHANNEL MOS
BUK763R1-40B,118
BUK763R1-40B,118
NXP Semiconductors
NEXPERIA BUK763R1-40B - 75A, 40V
IPB60R040CFD7ATMA1
IPB60R040CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 50A TO263-3-2
DMT2004UFDF-7
DMT2004UFDF-7
Diodes Incorporated
MOSFET N-CH 24V 14.1A 6UDFN
TJ200F04M3L,LXHQ
TJ200F04M3L,LXHQ
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 200A TO220SM
FQB6N40CFTM
FQB6N40CFTM
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
DMT8008SK3-13
DMT8008SK3-13
Diodes Incorporated
MOSFET BVDSS: 61V~100V TO252 T&R
DMNH10H028SK3-13
DMNH10H028SK3-13
Diodes Incorporated
MOSFET N-CH 100V 55A TO252
STF6N60DM2
STF6N60DM2
STMicroelectronics
MOSFET N-CH 600V 5A TO220FP
IPB60R160P6ATMA1
IPB60R160P6ATMA1
Infineon Technologies
MOSFET N-CH 600V 23.8A D2PAK
STP9NM50N
STP9NM50N
STMicroelectronics
MOSFET N-CH 500V 5A TO220AB
AO4476A_103
AO4476A_103
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 15A 8SO

Related Product By Brand

BAS7007WH6327XTSA1
BAS7007WH6327XTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT343
TDB6HK124N16RRBOSA1
TDB6HK124N16RRBOSA1
Infineon Technologies
SCR MODULE 1.6KV 70A MODULE
TD150N24KOFHPSA1
TD150N24KOFHPSA1
Infineon Technologies
SCR MODULE 2600V 350A MODULE
BSC120N03LSG
BSC120N03LSG
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 1
IRF6655TRPBF
IRF6655TRPBF
Infineon Technologies
MOSFET N-CH 100V 4.2A DIRECTFET
IPS09N03LA G
IPS09N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
IRU1240CSTR
IRU1240CSTR
Infineon Technologies
IC REG DUAL COMBO 8-SOIC
CY28441ZXC
CY28441ZXC
Infineon Technologies
IC CLK GEN CPU 133MHZ 2CIRC
MB90F022CPF-GS-9030
MB90F022CPF-GS-9030
Infineon Technologies
IC MCU MICOM FLASH 100QFP
S29GL01GT12TFN013
S29GL01GT12TFN013
Infineon Technologies
IC FLASH 1GBIT PARALLEL 56TSOP
CY14B104L-BA20XIT
CY14B104L-BA20XIT
Infineon Technologies
IC NVSRAM 4MBIT PARALLEL 48FBGA
CY62256EV18LL-70SNXI
CY62256EV18LL-70SNXI
Infineon Technologies
IC SRAM 256KBIT PARALLEL 28SOIC