IPW60R330P6FKSA1
  • Share:

Infineon Technologies IPW60R330P6FKSA1

Manufacturer No:
IPW60R330P6FKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPW60R330P6FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 12A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):93W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
72

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPW60R330P6FKSA1 IPW60R230P6FKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 16.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V 230mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 370µA 4.5V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 100 V 1450 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 93W (Tc) 126W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

LSIC1MO120E0160
LSIC1MO120E0160
Littelfuse Inc.
SICFET N-CH 1200V 22A TO247-3
PJQ5450-AU_R2_000A1
PJQ5450-AU_R2_000A1
Panjit International Inc.
40V N-CHANNEL ENHANCEMENT MODE M
FCD5N60TM
FCD5N60TM
onsemi
MOSFET N-CH 600V 4.6A DPAK
SQJA20EP-T1_GE3
SQJA20EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 200V 22.5A PPAK SO-8
IPAN70R600P7SXKSA1
IPAN70R600P7SXKSA1
Infineon Technologies
MOSFET N-CH 700V 8.5A TO220
IXFK50N85X
IXFK50N85X
IXYS
MOSFET N-CH 850V 50A TO264
STWA30N65DM6AG
STWA30N65DM6AG
STMicroelectronics
MOSFET N-CH 650V 28A TO247
IRFR1N60ATRLPBF
IRFR1N60ATRLPBF
Vishay Siliconix
MOSFET N-CH 600V 1.4A DPAK
IPB80P04P4L06ATMA1
IPB80P04P4L06ATMA1
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
IPA90R340C3XKSA2
IPA90R340C3XKSA2
Infineon Technologies
MOSFET N-CH 900V 15A TO220
IPB60R950C6ATMA1
IPB60R950C6ATMA1
Infineon Technologies
MOSFET N-CH 600V 4.4A D2PAK
IXFH12N50F
IXFH12N50F
IXYS
MOSFET N-CH 500V 12A TO247

Related Product By Brand

BASICPLUSDEMOBOARDTOBO1
BASICPLUSDEMOBOARDTOBO1
Infineon Technologies
EVALUATION BOARD FOR LITIX BASIC
BAR8802LRHE6327XTSA1
BAR8802LRHE6327XTSA1
Infineon Technologies
RF DIODE PIN 80V 250MW TSLP-2
D3041N65TXPSA1
D3041N65TXPSA1
Infineon Technologies
DIODE GEN PURP 6.5KV 4090A
IPA60R600E6
IPA60R600E6
Infineon Technologies
600V, 0.6OHM, N-CHANNEL, MOSFET
IPA60R450E6XKSA1
IPA60R450E6XKSA1
Infineon Technologies
MOSFET N-CH 600V 9.2A TO220-FP
BTS712204ESAXUMA1
BTS712204ESAXUMA1
Infineon Technologies
IC HID LAMP CNTRL 5MHZ 24TSSOP
ICB1FL03GXUMA1
ICB1FL03GXUMA1
Infineon Technologies
IC PFC/BALLAST CTR 100KHZ DSO-18
TDA16888G
TDA16888G
Infineon Technologies
IC PFC CTR AVERAGE 200KHZ DSO-20
AUIPS7142GTR
AUIPS7142GTR
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 16SOIC
CY96F615ABPMC-GS-UJE1
CY96F615ABPMC-GS-UJE1
Infineon Technologies
IC MCU 16BIT 160KB FLASH 48LQFP
MB90F549GPFV-GSE1
MB90F549GPFV-GSE1
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100LQFP
CY7C1313BV18-250BZC
CY7C1313BV18-250BZC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA