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Part Number | IPW60R199CP | IPW50R199CP | IPW60R099CP |
---|---|---|---|
Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Status | Active | Active | Active |
FET Type | - | N-Channel | N-Channel |
Technology | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | - | 500 V | 600 V |
Current - Continuous Drain (Id) @ 25°C | - | 17A (Tc) | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - | 10V | - |
Rds On (Max) @ Id, Vgs | - | 199mOhm @ 9.9A, 10V | 99mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | - | 3.5V @ 660µA | 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | - | 45 nC @ 10 V | 80 nC @ 10 V |
Vgs (Max) | - | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - | 1800 pF @ 100 V | 2800 pF @ 100 V |
FET Feature | - | - | - |
Power Dissipation (Max) | - | 139W (Tc) | 255W (Tc) |
Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | - | Through Hole | Through Hole |
Supplier Device Package | - | PG-TO247-3 | PG-TO247-3 |
Package / Case | - | TO-247-3 | TO-247-3 |