IPW60R190P6
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Infineon Technologies IPW60R190P6

Manufacturer No:
IPW60R190P6
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPW60R190P6 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20.2A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R190P6 IPW60R160P6  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630µA 4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 44 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 100 V 2080 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 151W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247 PG-TO247-3-41
Package / Case TO-247-3 TO-247-3

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