IPW60R180C7XKSA1
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Infineon Technologies IPW60R180C7XKSA1

Manufacturer No:
IPW60R180C7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW60R180C7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 13A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1080 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):68W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R180C7XKSA1 IPW60R180P7XKSA1   IPW60R120C7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 18A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 5.3A, 10V 180mOhm @ 5.6A, 10V 120mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 260µA 4V @ 280µA 4V @ 390µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 25 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 400 V 1081 pF @ 400 V 1500 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 68W (Tc) 72W (Tc) 92W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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