IPW60R160P6FKSA1
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Infineon Technologies IPW60R160P6FKSA1

Manufacturer No:
IPW60R160P6FKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPW60R160P6FKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 23.8A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2080 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):176W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R160P6FKSA1 IPW60R190P6FKSA1   IPW60R160C6FKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 23.8A (Tc) 20.2A (Tc) 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 9A, 10V 190mOhm @ 7.6A, 10V 160mOhm @ 11.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 750µA 4.5V @ 630µ 3.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 11 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 100 V 1750 pF @ 100 V 1660 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 176W (Tc) 151W (Tc) 176W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3-1
Package / Case TO-247-3 TO-247-3 TO-247-3

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