IPW60R105CFD7XKSA1
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Infineon Technologies IPW60R105CFD7XKSA1

Manufacturer No:
IPW60R105CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW60R105CFD7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 470µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1752 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):106W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R105CFD7XKSA1 IPW60R145CFD7XKSA1   IPW60R125CFD7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 16A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 9.3A, 10V - 125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 470µA - 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V - 36 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1752 pF @ 400 V - 1503 pF @ 400 V
FET Feature - Standard -
Power Dissipation (Max) 106W (Tc) - 92W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package PG-TO247-3-41 - PG-TO247-3
Package / Case TO-247-3 - TO-247-3

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