IPW60R099CP
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Infineon Technologies IPW60R099CP

Manufacturer No:
IPW60R099CP
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPW60R099CP Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 31A TO247-3-1
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2800 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):255W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R099CP IPW60R199CP   IPW60R099C7  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel - N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V - 600 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) - 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - -
Rds On (Max) @ Id, Vgs 99mOhm @ 18A, 10V - 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.2mA - 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V - 42 nC @ 10 V
Vgs (Max) ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 100 V - 1819 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 255W (Tc) - 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole - Through Hole
Supplier Device Package PG-TO247-3 - PG-TO247
Package / Case TO-247-3 - TO-247-3

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