IPW60R099C7XKSA1
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Infineon Technologies IPW60R099C7XKSA1

Manufacturer No:
IPW60R099C7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW60R099C7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 14A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1819 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R099C7XKSA1 IPW60R099P7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V 99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA 4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819 pF @ 400 V 1952 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 117W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3

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