IPW60R090CFD7XKSA1
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Infineon Technologies IPW60R090CFD7XKSA1

Manufacturer No:
IPW60R090CFD7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW60R090CFD7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 25A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:90mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2103 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Similar Products

Part Number IPW60R090CFD7XKSA1 IPW60R040CFD7XKSA1   IPW60R070CFD7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 50A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 11.4A, 10V 40mOhm @ 24.9A, 10V 70mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 570µA 4.5V @ 1.25mA 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V 109 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2103 pF @ 400 V 4354 pF @ 400 V 2721 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 125W (Tc) 227W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3-21
Package / Case TO-247-3 TO-247-3 TO-247-3

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