IPW60R060C7XKSA1
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Infineon Technologies IPW60R060C7XKSA1

Manufacturer No:
IPW60R060C7XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPW60R060C7XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 35A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id:4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2850 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):162W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3
Package / Case:TO-247-3
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Part Number IPW60R060C7XKSA1 IPW60R060P7XKSA1   IPW60R040C7XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 48A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 15.9A, 10V 60mOhm @ 15.9A, 10V 40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA 4V @ 800µA 4V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 67 nC @ 10 V 107 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 400 V 2895 pF @ 400 V 4340 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 162W (Tc) 164W (Tc) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO247-3 PG-TO247-3 PG-TO247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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