Infineon Technologies-IPW60R045P7XKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	45mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:	4V @ 1.08mA
Gate Charge (Qg) (Max) @ Vgs:	90 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3891 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	201W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO247-3-41
Package / Case:	TO-247-3

Infineon Technologies IPW60R045P7XKSA1